document number: 88946 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 13-oct-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 surface mount schottky barrier rectifier b120 thru b160 vishay general semiconductor new product features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? low forward voltage drop ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in low voltage, high frequency inverters, freewheeling, dc-to-dc conver ters, and polarity protection applications. note ? these devices are no t aec-q101 qualified mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms primary characteristics i f(av) 1.0 a v rrm 20 v to 60 v i fsm 30 a v f 0.52 v, 0.75 v t j max. 125 c, 150 c do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol b120 B130 b140 b150 b160 unit device marking code b12 b13 b14 b15 b16 maximum repetitive pe ak reverse voltage v rrm 20 30 40 50 60 v maximum average forward rectified current (fig. 1) i f(av) 1.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 30 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j - 65 to + 125 - 65 to + 150 c storage temperature range t stg - 65 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol b120 B130 b140 b150 b160 unit maximum instantaneous forward voltage 1.0 a v f (1) 0.52 0.75 v maximum reverse current at rated v r t a = 25 c i r (2) 0.2 ma t a = 100 c 6.0 5.0
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88946 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 13-oct-09 b120 thru b160 vishay general semiconductor new product note (1) p.c.b. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm ) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forwar d current derating curve fig. 2 - forward power loss characteristics fig. 3 - forward power loss characteristics fig. 4 - typical instantaneous forward characteristics thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol b120 B130 b140 b150 b160 unit typical thermal resistance r ja (1) 95 c/w r jl (1) 30 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode b140-e3/61t 0.064 61t 1800 7" diam eter plastic tape and reel b140-e3/5at 0.064 5at 7500 13" diam eter plastic tape and reel re s i s tive or inductive load average forwar d rectified current (a) lead temperature (c) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 p.c.b. mounted on 0.2 " x 0.2 " (5.0 mm x 5.0 mm) copper pad area s b120 thru b140 b150 and b160 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 average forward current average power lo ss (w) d = t p /t t p t b120 thru b140 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 average forward current (a) average power lo ss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 d = t p /t t p t b150 and b160 40 30 20 10 0 110100 number of cycle s at 50 hz peak forwar d s urge current (a)
document number: 88946 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 13-oct-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 b120 thru b160 vishay general semiconductor new product fig. 5 - typical instantaneous forward characteristics fig. 6 - typical instantaneous forward characteristics fig. 7 - typical reverse leakage characteristics fig. 8 - typical j unction capacitance package outline dimensions in inches (millimeters) in s tantaneou s forward voltage (v) in s tantaneou s forwar d current (a) 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.01 t j = 150 c t j = 125 c t j = 25 c b120 thru b140 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.01 t j = 150 c t j = 125 c t j = 25 c b150 and b160 100 000 10 000 1000 100 10 10 20 30 40 50 60 70 80 90 100 1 0.1 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) t j = 150 c t j = 125 c t j = 25 c b120 thru b140 b150 and b160 0.1 1 10 100 1000 100 10 rever s e voltage (v) junction capacitance (pf) b120 thru b140 b150 and b160 t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min.
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